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GaN-Based Trench Gate Metal Oxide Semiconductor Field...

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm 2 /(V s) Channel Mobility

Otake, Hirotaka, Egami, Shin, Ohta, Hiroaki, Nanishi, Yasushi, Takasu, Hidemi
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.L599
Date:
June, 2007
File:
PDF, 105 KB
english, 2007
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