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High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves
Hamano, Akihide, Ohno, Seigo, Minamide, Hiroaki, Ito, Hiromasa, Usuki, YoshiyukiVolume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.491
Date:
February, 2014
File:
PDF, 740 KB
english, 2014