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Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
Zetterling, C.M., Östling, Mikael, Harris, Chris I., Nordell, Nils, Wongchotigul, K., Spencer, Michael G.Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.877
File:
PDF, 334 KB
1998