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Passivation Effects of 100 nm In 0.4 AlAs/In 0.35 GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition
Kim, Sungwon, Jang, Kyoungchul, Seol, Gyungseon, Her, Jincherl, Seo, KwangseokVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.46.2341
Date:
April, 2007
File:
PDF, 140 KB
english, 2007