Gate-Length Dependence of DC Characteristics in...

Japanese Journal of Applied Physics 2007 / 4 Vol. 46; Iss. 4B

Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors

Ide, Toshihide, Shimizu, Mitsuaki, Nakajima, Akira, Inada, Masaki, Yagi, Shuichi, Piao, Guanxi, Yano, Yoshiki, Akutsu, Nakao, Okumura, Hajime, Arai, Kazuo
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.2334
Date:
April, 2007
File:
PDF, 184 KB
english, 2007
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