High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p – i – n Vertical Conducting Diode on n -SiC Substrate
Nishikawa, Atsushi, Kumakura, Kazuhide, Makimoto, ToshikiVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.46.2316
Date:
April, 2007
File:
PDF, 1.10 MB
english, 2007