Gate Length Reduction Technology for Pseudomorphic In 0.52 Al 0.48 As/In 0.7 Ga 0.3 As High Electron Mobility Transistors
Yeon, Seong-Jin, Lee, Jongwon, Seol, Gyungseon, Seo, KwangseokVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.46.2296
Date:
April, 2007
File:
PDF, 268 KB
english, 2007