Improved GaN films with low background doping and low deep...

Physica status solidi 2015 / 04 Vol. 12; Iss. 4-5

Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

Polyakov, Alexander, Smirnov, Nikolai, Govorkov, Anatoli, Kozhukhova, Elena, Yugova, Tatiana, Usikov, Alexander, Helava, Heikki, Makarov, Yuri
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Volume:
12
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201400173
Date:
April, 2015
File:
PDF, 235 KB
english, 2015
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