Recovery of neutron-induced damage of SiC by thermal...

Recovery of neutron-induced damage of SiC by thermal annealing up to 1400 °C

Saishun Yamazaki, Masamitsu Imai, Toyohiko Yano
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Volume:
50
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.pnucene.2007.11.046
File:
PDF, 432 KB
english, 2008
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