Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility...

Japanese Journal of Applied Physics 2006 / 11 Vol. 45; Iss. No. 44

Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage

Ohmaki, Yuji, Tanimoto, Masashi, Akamatsu, Shiro, Mukai, Takashi
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.45.l1168
Date:
November, 2006
File:
PDF, 113 KB
english, 2006
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