Control of Threshold Voltage of Enhancement-Mode Al x Ga 1- x N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
Fujii, Takahiro, Tsuyukuchi, Norio, Hirose, Yoshikazu, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, IsamuVolume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.115
Date:
January, 2007
File:
PDF, 167 KB
english, 2007