Al 0.17 Ga 0.83...

Al 0.17 Ga 0.83 N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition

Sumiyoshi, Kazuhide, Tsukihara, Masashi, Kataoka, Ken, Kawamichi, Syuichi, Okimoto, Takashi, Nishino, Katsushi, Naoi, Yoshiki, Sakai, Shiro
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.46.491
Date:
February, 2007
File:
PDF, 592 KB
english, 2007
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