InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy
Kim, Kwang Woong, Cho, Nam Ki, Ryu, Sung Phil, Song, Jin Dong, Choi, Won Jun, Lee, Jung Il, Park, Jung HoVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.8010
Date:
October, 2006
File:
PDF, 309 KB
english, 2006