In 0.49 GaP/Al...

In 0.49 GaP/Al 0.45 GaAs Barrier Enhancement-Mode Pseudomorphic High Electron Mobility Transistor with High Gate Turn-on Voltage and High Linearity

Jang, Kyoungchul, Lee, Juyong, Lee, Jaehak, Seo, Kwangseok
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3355
Date:
April, 2006
File:
PDF, 109 KB
english, 2006
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