![](/img/cover-not-exists.png)
In 0.49 GaP/Al 0.45 GaAs Barrier Enhancement-Mode Pseudomorphic High Electron Mobility Transistor with High Gate Turn-on Voltage and High Linearity
Jang, Kyoungchul, Lee, Juyong, Lee, Jaehak, Seo, KwangseokVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3355
Date:
April, 2006
File:
PDF, 109 KB
english, 2006