High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO 2 /SiN Triple-Layer Insulators
Endoh, Akira, Yamashita, Yoshimi, Hirose, Nobumitsu, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, TakashiVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3364
Date:
April, 2006
File:
PDF, 209 KB
english, 2006