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High Performance AlGaN/GaN Metal–Insulator–Semiconductor...

High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO 2 /SiN Triple-Layer Insulators

Endoh, Akira, Yamashita, Yoshimi, Hirose, Nobumitsu, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, Takashi
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3364
Date:
April, 2006
File:
PDF, 209 KB
english, 2006
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