Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
Lim, Jong-Won, Ahn, Ho-Kyun, Ji, Hong-Gu, Chang, Woo-Jin, Mun, Jae-Kyoung, Kim, HaecheonVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3358
Date:
April, 2006
File:
PDF, 498 KB
english, 2006