Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors
Yamada, Hisashi, Fukuhara, Noboru, Hata, MasahikoVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3909
Date:
May, 2006
File:
PDF, 93 KB
english, 2006