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Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer
Sasaki, Hitoshi, Kato, Sadahiro, Matsuda, Takeyoshi, Sato, Yoshihiro, Iwami, Masayuki, Yoshida, SeikohVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.2531
Date:
April, 2006
File:
PDF, 164 KB
english, 2006