Fabrication and Characteristics of GaN-Based Microcavity...

Japanese Journal of Applied Physics 2006 / 4 Vol. 45; Iss. 4B

Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN/GaN Distributed Bragg Reflectors

Peng, Yu-Chun, Kao, Chih-Chiang, Huang, Hung-Wen, Chu, Jung-Tang, Lu, Tien-Chang, Kuo, Hao-Chung, Wang, Shing-Chung, Yu, Chang-Chin
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3446
Date:
April, 2006
File:
PDF, 286 KB
english, 2006
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