High-Speed Digital Circuits Using InP-based Resonant...

Japanese Journal of Applied Physics 2006 / 4 Vol. 45; Iss. 4B

High-Speed Digital Circuits Using InP-based Resonant Tunneling Diode and High Electron Mobility Transistor Heterostructure

Kim, Hyungtae, Yeon, Seongjin, Song, Sangsub, Park, Sangho, Seo, Kwangseok
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.45.3384
Date:
April, 2006
File:
PDF, 196 KB
english, 2006
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