Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In x Ga 1- x As Channel
Huang, Jun-Chin, Hsu, Wei-Chou, Lee, Ching-Sung, Chen, Yeong-Jia, Huang, Dong-Hai, Chen, Hsin-HungVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.44.8305
Date:
December, 2005
File:
PDF, 213 KB
english, 2005