High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al 2 O 3 /Si 3 N 4 Bilayer
Wang, Chengxin, Maeda, Narihiko, Hiroki, Masanobu, Kobayashi, Takashi, Enoki, TakatomoVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.7889
Date:
November, 2005
File:
PDF, 208 KB
english, 2005