New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance
Shirota, Riichiro, Yang, Bo-Jun, Chiu, Yung-Yueh, Chen, Hsuan-Tse, Ng, Seng-Fei, Wang, Pin-Yao, Chang, Jung-Ho, Kurachi, IkuoVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2366116
Date:
January, 2015
File:
PDF, 2.24 MB
english, 2015
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