Basal Plane Dislocation Dynamics in Highly p-Type Doped...

Materials Science Forum 2006 Vol. 527-529

Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

Wellmann, Peter J., Queren, Desirée, Müller, Ralf, Sakwe, Sakwe Aloysius, Künecke, Ulrike
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.79
File:
PDF, 270 KB
english, 2006
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