Modelling of the Anomalous Field-Effect Mobility Peak of...

Materials Science Forum 2006 Vol. 527-529

Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion

Pérez-Tomás, Amador, Vellvehi, Miquel, Mestres, Narcis, Millán, José, Vennegues, P., Stoemenos, J.
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1059
File:
PDF, 682 KB
english, 2006
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