Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide...

Materials Science Forum 2014 / 2 Vol. 778-780

Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal

Yen, Cheng Tyng, Hung, Chien Chung, Mikhaylov, Aleksey, Lee, Chwan Ying, Lee, Lurng Shehng, Wei, Jeng Hua, Chiu, Ting Yu, Huang, Chih Fang, Reshanov, Sergey, Schöner, Adolf
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.989
Date:
February, 2014
File:
PDF, 1.46 MB
english, 2014
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