Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)
Gudjónsson, G., Ólafsson, H.Ö., Sveinbjörnsson, Einar Ö.Volume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.1425
File:
PDF, 565 KB
english, 2004