Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface
Seto, Hiroki, Miyamura, Satoshi, Inokuma, Takao, Iiyama, Koichi, Takamiya, SaburoVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.44.2905
Date:
May, 2005
File:
PDF, 261 KB
english, 2005