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The Role of Geometry Parameters and Fin Aspect Ratio of Sub-20nm SOI-FinFET: An Analysis Towards Analog and RF Circuit Design
Mohapatra, S. K., Pradhan, K. P., Singh, D., Sahu, P. K.Volume:
14
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/tnano.2015.2415555
Date:
May, 2015
File:
PDF, 3.42 MB
english, 2015