4H-SiC CVD Epitaxial Layers with Improved Structural...

Materials Science Forum 2000 Vol. 338-342

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Kalinina, Evgenia V., Zubrilov, A.S., Solov'ev, V., Kuznetsov, N.I., Hallén, Anders, Konstantinov, Andrey O., Karlsson, S., Rendakova, S.V., Dmitriev, Vladimir
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Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.505
File:
PDF, 431 KB
english, 2000
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