Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on...

Materials Science Forum 2012 / 5 Vol. 717-720

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

Zippelius, Bernd, Hauck, Martin, Beljakowa, Svetlana, Weber, Heiko B., Krieger, Michael, Nagasawa, Hiroyuki, Uchida, Hidetsugu, Pensl, Gerhard, Schöner, Adolf
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.1113
Date:
May, 2012
File:
PDF, 285 KB
english, 2012
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