High-Quality 2'' Bulk-Like Free-Standing GaN Grown by...

Japanese Journal of Applied Physics 2005 / 3 Vol. 44; Iss. 3

High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

Gogova, Daniela, Larsson, Henrik, Kasic, Alexander, Yazdi, Gholam Reza, Ivanov, Ivan, Yakimova, Rositza, Monemar, Bo, Aujol, Eric, Frayssinet, Eric, Faurie, Jean-Pierre, Beaumont, Bernard, Gibart, Pie
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.1181
Date:
March, 2005
File:
PDF, 241 KB
english, 2005
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