Comparison of AlGaN/GaN Insulated Gate Heterostructure...

Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al 2 O 3 /Si 3 N 4 Bilayer and Si 3 N 4 Single Layer

Wang, Chengxin, Maeda, Narihiko, Hiroki, Masanobu, Tawara, Takehiko, Makimoto, Toshiki, Kobayashi, Takashi, Enoki, Takotomo
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2735
Date:
April, 2005
File:
PDF, 281 KB
english, 2005
Conversion to is in progress
Conversion to is failed