Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

Makimoto, Toshiki, Yamauchi, Yoshiharu, Kido, Takatoshi, Kumakura, Kazuhide, Taniyasu, Yoshitaka, Kasu, Makoto, Matsumoto, Nobuo
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.44.2722
Date:
April, 2005
File:
PDF, 117 KB
english, 2005
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