High Brightness InGaN/GaN Blue Light Emitting Diode...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a 6×2'' MOCVD System

Ju, Jin-Woo, Lee, Cheul-Ro, Baek, Jong-Hyeob, Lee, Young Hee, Lee, In-Hwan
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.44.2506
Date:
April, 2005
File:
PDF, 212 KB
english, 2005
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