Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs

Kikuta, Daigo, Takaki, Ryohei, Matsuda, Junya, Okada, Masaya, Wei, Xin, Ao, Jin-Ping, Ohno, Yasuo
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.44.2479
Date:
April, 2005
File:
PDF, 170 KB
english, 2005
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