High Performance 0.1 µm GaAs Pseudomorphic High Electron...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

High Performance 0.1 µm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77 GHz Car Radar Applications

Kim, Sungwon, Noh, Hunhee, Jang, Kyoungchul, Lee, JaeHak, Seo, Kwangseok
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2472
Date:
April, 2005
File:
PDF, 231 KB
english, 2005
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