Substrate Leakage Current in InGaP/GaAs Heterojunction...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Substrate Leakage Current in InGaP/GaAs Heterojunction Bipolar Transistors

Chang, Yang-Hua, Chang, Zhi-Juan, Hsieh, Yi-Jing
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2450
Date:
April, 2005
File:
PDF, 140 KB
english, 2005
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