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Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs
Scharnholz, S., Stein von Kamienski, E., Gölz, A., Leonhard, C., Kurz, H.Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.1001
File:
PDF, 314 KB
1998