Charge Carrier Lifetime Modificaiton in Silicon by High...

Materials Science Forum 1997 Vol. 248-249

Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation

Khánh, N.Q., Tüttö, P., Jároli, E.N., Buiu, O., Biró, L.P., Pászti, F., Mohácsy, T., Kovacsics, C., Manuaba, A., Gyulai, J.
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Volume:
248-249
Year:
1997
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.248-249.101
File:
PDF, 372 KB
1997
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