Vertical GaN-Based Trench Gate Metal Oxide Semiconductor...

Applied Physics Express 2008 / 1 Vol. 1; Iss. 1

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

Otake, Hirotaka, Chikamatsu, Kentaro, Yamaguchi, Atsushi, Fujishima, Tatsuya, Ohta, Hiroaki
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Volume:
1
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.1.011105
Date:
January, 2008
File:
PDF, 260 KB
english, 2008
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