Influence of Source/Drain Parasitic Resistance on Device...

Applied Physics Express 2011 / 8 Vol. 4; Iss. 8

Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Maegawa, Yōsuke, Koba, Shunsuke, Tsuchiya, Hideaki, Ogawa, Matsuto
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Volume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.084301
Date:
August, 2011
File:
PDF, 433 KB
english, 2011
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