Defect Study on Si Implanted with B and BF2 Ions by...

Defect Study on Si Implanted with B and BF2 Ions by Coincidence Doppler Broadening Measurements

Akahane, Takashi, Fujinami, Masanori, Ohnishi, Keisuke, Sawada, Tsuguo
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Volume:
363-365
Year:
2001
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.363-365.469
File:
PDF, 269 KB
2001
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