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Improved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer Deposition
Molle, Alessandro, Lamagna, Luca, Wiemer, Claudia, Spiga, Sabina, Fanciulli, Marco, Merckling, Clement, Brammertz, Guy, Caymax, MattyVolume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.094103
Date:
August, 2011
File:
PDF, 510 KB
english, 2011