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Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation
Takagi, H., Maeda, Ryutaro, Hosoda, N., Suga, T.Volume:
294-296
Year:
1999
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.294-296.341
File:
PDF, 626 KB
1999