Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
Wright, Nicolas G., Poolamai, N., Vassilevski, Konstantin V., Horsfall, A.B., Johnson, C. MarkVolume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.1433
File:
PDF, 250 KB
english, 2004