Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers
Franke, Dieter, Kreissl, Jochen, Rehbein, Wolfgang, Wenning, Felix, Kuenzel, Harald, Pohl, Udo W., Bimberg, DieterVolume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.4.014101
Date:
January, 2011
File:
PDF, 884 KB
english, 2011