Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
Adachi, Masahiro, Yoshizumi, Yusuke, Enya, Yohei, Kyono, Takashi, Sumitomo, Takamichi, Tokuyama, Shinji, Takagi, Shinpei, Sumiyoshi, Kazuhide, Saga, Nobuhiro, Ikegami, Takatoshi, Ueno, Masaki, KatayamVolume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.3.121001
Date:
November, 2010
File:
PDF, 950 KB
english, 2010