Ultrahigh-Speed AlInN/GaN High Electron Mobility...

Applied Physics Express 2010 / 9 Vol. 3; Iss. 9

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F T = 143 GHz

Sun, Haifeng, Alt, Andreas R., Benedickter, Hansruedi, Bolognesi, C. R., Feltin, Eric, Carlin, Jean-François, Gonschorek, Marcus, Grandjean, Nicolas
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Volume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.3.094101
Date:
September, 2010
File:
PDF, 147 KB
english, 2010
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