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Fabrication of Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with a 15-nm-Wide Mesa Structure and a Drain Current Density of 7 MA/cm 2
Saito, Hisashi, Miyamoto, Yasuyuki, Furuya, KazuhitoVolume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.3.084101
Date:
July, 2010
File:
PDF, 455 KB
english, 2010